Job Responsibilities: - Responsible for researching and developing MOCVD growth processes for gallium arsenide (GaAs) and indium phosphide (InP) material systems. - Participate in quality control and optimization during wafer production to ensure products meet customer requirements for GaAs and InP materials. - Understand and operate related MOCVD equipment, perform equipment maintenance and upgrades to enhance production efficiency. - Explore new epitaxial materials and evaluate their performance, providing technical support for new product development. - Monitor industry technology trends, analyze competitors' products and technology routes, and formulate corresponding R&D strategies. - Collaborate with cross-departmental teams to achieve project goals, including but not limited to process optimization, equipment debugging, data analysis, etc. - Write research reports and technical documents, participate in domestic and international academic exchanges and cooperation.

Qualifications: A doctoral degree background in gallium arsenide (GaAs) and indium phosphide (InP) material systems - Possess a Ph.D. in compound semiconductor materials, physics, or related fields with overseas experience. - Have experience in MOCVD growth of gallium arsenide (AsGa) and indium phosphide (InP) material systems, and be familiar with the operation and maintenance of relevant equipment. - Have excellent English proficiency in listening, speaking, reading, and writing, capable of fluent international academic communication. - Be passionate about returning to China for development and willing to contribute to the advancement of China's semiconductor industry. - Demonstrate strong research capabilities and innovative awareness, able to work independently under pressure. - Exhibit good teamwork spirit and communication coordination skills, capable of effectively collaborating with professionals from different backgrounds.